Pi-shaped MEMS architecture for lowering actuation voltage of RF switching
Mafinejad, Yasser, Kouzani, Abbas Z., Mafinezhad, Khalil and Golmakani, Abbas 2009, Pi-shaped MEMS architecture for lowering actuation voltage of RF switching, IEICE electronics express, vol. 6, no. 20, pp. 1483-1489.
(Some files may be inaccessible until you login with your DRO credentials)
A wide band low actuation capacitive coupling electrostatic RF MEMS switching device is presented in this paper. The device includes a pi-shaped matching architecture containing two switches connected by a high impedance short transmission line. The device can act as a switch for any desired frequency whilst requiring only 12volts for actuation. By optimizing the length and the characteristic impedance of the transmission line, the switch can be tailored for desired frequency bands. The switch is calculated and simulated for Ka to V frequency bands demonstrating excellent improvements of RF characteristics.
Field of Research
091306 Microelectromechanical Systems (MEMS) 090604 Microelectronics and Integrated Circuits
Unless expressly stated otherwise, the copyright for items in DRO is owned by the author, with all rights reserved.
Every reasonable effort has been made to ensure that permission has been obtained for items included in DRO.
If you believe that your rights have been infringed by this repository, please contact firstname.lastname@example.org.