Openly accessible

Design and simulation of a low voltage wide band RF MEMS switch

Mafinejad, Y., Kouzani, Abbas Z., Mafinezhad, K. and Nabovatti, H. 2009, Design and simulation of a low voltage wide band RF MEMS switch, in SMC 2009 : Proceedings of the IEEE International Conference on Systems, Man and Cybernetics, IEEE, Piscataway, N. J., pp. 4623-4627.

Attached Files
Name Description MIMEType Size Downloads
kouzani-designandsimulation-2009.pdf Published version application/pdf 578.00KB 289

Title Design and simulation of a low voltage wide band RF MEMS switch
Author(s) Mafinejad, Y.
Kouzani, Abbas Z.
Mafinezhad, K.
Nabovatti, H.
Conference name IEEE International Conference on Systems, Man, and Cybernetics (2009 : San Antonio, Texas)
Conference location San Antonio, Texas
Conference dates 11-14 Oct. 2009
Title of proceedings SMC 2009 : Proceedings of the IEEE International Conference on Systems, Man and Cybernetics
Editor(s) [Unknown]
Publication date 2009
Conference series International Conference on Systems, Man and Cybernetics
Start page 4623
End page 4627
Total pages 5
Publisher IEEE
Place of publication Piscataway, N. J.
Keyword(s) RF MEMS switches
low actuation voltage
piezoelectric actuation
scattering parameters
Summary This paper presents design of an electrostatic wide band shunt capacitive coupling RF MEMS switch with low actuation voltage. The key factors of the RF MEMS switch design are the proper scattering parameters, low actuation voltage, and the cost of the fabrication process. An overview of the recent low actuation voltage RFMEMS switches has been presented. These designs still suffer from the complexity of process, lack of reliability, limitation of frequency band, and process cost. RF characteristics of a shunt RF MEMS switches are specified mostly by coupling capacitor in upstate position of the membrane Cu. This capacitor is in trade-off with actuation voltage. In this work, the capacitor is eliminated by using two short high impedance transmission lines, at the input and output of the switch. The simulation results demonstrate an improvement in the RF characteristic of the switch.
ISBN 9781424427932
ISSN 1062-922X
Language eng
Field of Research 091306 Microelectromechanical Systems (MEMS)
Socio Economic Objective 861702 Telemetry Equipment
HERDC Research category E1 Full written paper - refereed
Copyright notice ©2009, IEEE
Persistent URL http://hdl.handle.net/10536/DRO/DU:30029210

Document type: Conference Paper
Collections: School of Engineering
Open Access Collection
Connect to link resolver
 
Unless expressly stated otherwise, the copyright for items in DRO is owned by the author, with all rights reserved.

Every reasonable effort has been made to ensure that permission has been obtained for items included in DRO. If you believe that your rights have been infringed by this repository, please contact drosupport@deakin.edu.au.

Versions
Version Filter Type
Citation counts: TR Web of Science Citation Count  Cited 1 times in TR Web of Science
Google Scholar Search Google Scholar
Access Statistics: 375 Abstract Views, 289 File Downloads  -  Detailed Statistics
Created: Thu, 10 Jun 2010, 12:39:25 EST by Leanne Swaneveld

Every reasonable effort has been made to ensure that permission has been obtained for items included in DRO. If you believe that your rights have been infringed by this repository, please contact drosupport@deakin.edu.au.