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Design and simulation of a RF MEMS shunt switch for Ka and V bands and the impact of varying its geometrical parameters

Mafinejad, Y., Kouzani, A. Z., Mafinezhad, K. and Izadi, D. 2009, Design and simulation of a RF MEMS shunt switch for Ka and V bands and the impact of varying its geometrical parameters, in MWSCAS 2009 : International Midwest Symposium IEEE Circuits and Systems, IEEE, Piscataway, N. J., pp. 823-826.

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Title Design and simulation of a RF MEMS shunt switch for Ka and V bands and the impact of varying its geometrical parameters
Author(s) Mafinejad, Y.
Kouzani, A. Z.
Mafinezhad, K.
Izadi, D.
Conference name International Midwest Symposium IEEE Circuits and Systems (52nd : 2009 : Cuncan, Mexico)
Conference location Cancun, Mexico
Conference dates 2-5 Aug. 2009
Title of proceedings MWSCAS 2009 : International Midwest Symposium IEEE Circuits and Systems
Editor(s) [Unknown]
Publication date 2009
Conference series International Midwest Symposium on Circuits and Systems
Start page 823
End page 826
Publisher IEEE
Place of publication Piscataway, N. J.
Summary RF MEMS plays an important role in microwave switching. The high performance of RF MEMS shunt such as high bandwidth, low insertion loss, and high isolation have made these switches well suitable for high performing microwave and millimeter wave circuits. This paper presents a RF MEMS shunt capacitive switch for Ka and V band application. This paper investigates the effect of various geometrical parameters on RF characteristics of the switch. The simulation results are presented and discussed.
ISBN 9781424444793
ISSN 1548-3746
Language eng
Field of Research 091306 Microelectromechanical Systems (MEMS)
Socio Economic Objective 861702 Telemetry Equipment
HERDC Research category E1 Full written paper - refereed
Copyright notice ©2009, IEEE
Persistent URL http://hdl.handle.net/10536/DRO/DU:30029256

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Created: Fri, 11 Jun 2010, 14:37:36 EST by Leanne Swaneveld