Design and simulation of a RF MEMS shunt switch for Ka and V bands and the impact of varying its geometrical parameters
Mafinejad, Y., Kouzani, A. Z., Mafinezhad, K. and Izadi, D. 2009, Design and simulation of a RF MEMS shunt switch for Ka and V bands and the impact of varying its geometrical parameters, in MWSCAS 2009 : International Midwest Symposium IEEE Circuits and Systems, IEEE, Piscataway, N. J., pp. 823-826.
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MWSCAS 2009 : International Midwest Symposium IEEE Circuits and Systems
International Midwest Symposium on Circuits and Systems
Place of publication
Piscataway, N. J.
RF MEMS plays an important role in microwave switching. The high performance of RF MEMS shunt such as high bandwidth, low insertion loss, and high isolation have made these switches well suitable for high performing microwave and millimeter wave circuits. This paper presents a RF MEMS shunt capacitive switch for Ka and V band application. This paper investigates the effect of various geometrical parameters on RF characteristics of the switch. The simulation results are presented and discussed.
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