Crystal phase engineered quantum wells in ZnO nanowires

Khranovskyy, V., Glushenkov, Alexey M., Chen, Y., Khalid, A., Zhang, H., Hultman, L., Monemar, B. and Yakimova, R. 2013, Crystal phase engineered quantum wells in ZnO nanowires, Nanotechnology, vol. 24, no. 21, pp. 1-7, doi: 10.1088/0957-4484/24/21/215202.

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Title Crystal phase engineered quantum wells in ZnO nanowires
Author(s) Khranovskyy, V.
Glushenkov, Alexey M.
Chen, Y.ORCID iD for Chen, Y.
Khalid, A.
Zhang, H.
Hultman, L.
Monemar, B.
Yakimova, R.
Journal name Nanotechnology
Volume number 24
Issue number 21
Start page 1
End page 7
Total pages 7
Publisher Institute of Physics Publishing Ltd
Place of publication Bristol, England
Publication date 2013
ISSN 0957-4484
Keyword(s) Basal plane stacking faults
engineering approaches
luminescence mechanisms
material interfaces
photoluminescence properties
potential barriers
Type II band alignments
Zno nanowires (NWs)
Language eng
DOI 10.1088/0957-4484/24/21/215202
Field of Research 100708 Nanomaterials
Socio Economic Objective 850602 Energy Storage (excl. Hydrogen)
HERDC Research category C1 Refereed article in a scholarly journal
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Document type: Journal Article
Collection: Institute for Frontier Materials
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Created: Tue, 27 Aug 2013, 11:52:21 EST

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