RF techniques for lowering the actuation voltage of RF MEMS shunt capacitor switch for C-K band

Mafinejad, Yasser and Kouzani, A.Z. 2013, RF techniques for lowering the actuation voltage of RF MEMS shunt capacitor switch for C-K band, in Proceedings of the 14th Annual Conference on Wireless and Microwave Technology; IEEE 2013, IEEE, Piscataway, N.J., pp. 1-3, doi: 10.1109/WAMICON.2013.6572755.

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Title RF techniques for lowering the actuation voltage of RF MEMS shunt capacitor switch for C-K band
Author(s) Mafinejad, Yasser
Kouzani, A.Z.ORCID iD for Kouzani, A.Z. orcid.org/0000-0002-6292-1214
Conference name Wireless and Microwave Technology Conference (14th : 2013 : Orlando, Florida)
Conference location Orlando, Florida
Conference dates 7-9 Apr. 2013
Title of proceedings Proceedings of the 14th Annual Conference on Wireless and Microwave Technology; IEEE 2013
Editor(s) [Unknown]
Publication date 2013
Conference series Wireless and Microwave Technology Conference
Start page 1
End page 3
Total pages 3
Publisher IEEE
Place of publication Piscataway, N.J.
Keyword(s) component
RF MEMS switch
Meander
short high impedance transmission line (SHITL)
low actuation voltage
Summary Increasing the capacitance ratio in RF MEMS shunt capacitive switch will increase its RF performance but also raise its actuation voltage. To improve the RF performance of the switch without increasing its capacitance ratio, this paper explores two methods: reducing the LC resonance from the mm-wave into the X-band by using an inductive bridge, and using two short high impedance transmission lines at both ends of the CPW line. Accordingly, this paper presents the design and simulation of an electro-static low actuation voltage and a very high isolation multipurpose switch with a very large bandwidth. The simulation results are presented and discussed.
ISBN 1467355356
9781467355353
Language eng
DOI 10.1109/WAMICON.2013.6572755
Field of Research 090604 Microelectronics and Integrated Circuits
091306 Microelectromechanical Systems (MEMS)
Socio Economic Objective 861603 Integrated Circuits and Devices
HERDC Research category E1 Full written paper - refereed
Copyright notice ©2013, IEEE
Persistent URL http://hdl.handle.net/10536/DRO/DU:30061617

Document type: Conference Paper
Collection: School of Engineering
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