Design and simulation of a high isolation RF MEMS shunt capacitive switch for C-K band

Mafinejad, Yasser, Zarghami, Majid, Kouzani, Abbas Z. and Mafinezhad, Khalil 2013, Design and simulation of a high isolation RF MEMS shunt capacitive switch for C-K band, IEICE electronics express, vol. 10, no. 24, Article 20130746, pp. 1-8, doi: 10.1587/elex.10.20130746.

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Title Design and simulation of a high isolation RF MEMS shunt capacitive switch for C-K band
Author(s) Mafinejad, Yasser
Zarghami, Majid
Kouzani, Abbas Z.ORCID iD for Kouzani, Abbas Z. orcid.org/0000-0002-6292-1214
Mafinezhad, Khalil
Journal name IEICE electronics express
Volume number 10
Issue number 24
Season Article 20130746
Start page 1
End page 8
Total pages 8
Publisher The Institute of Electronics, Information and Communication Engineers
Place of publication Tokyo, Japan
Publication date 2013
ISSN 1349-2543
1349-9467
Keyword(s) discontinuity CPW
insertion loss
isolation
LC resonant frequency
meander type beam
Summary This paper presents a wide band RF MEMS capacitive switch. The LC resonant frequency is reduced from mm wave to X band frequencies at down-state by using a meander type membrane, with the frequency band is being increased by adding two short high impedance lines at both ends of coplanar waveguide (CPW). Moreover, this acts as T-match circuit in up-state position and improves the matching. Simulation results demonstrate that the capacitance ratio reduces from 50 to 21.4, S21 and S11 are less than −10dB for the entire frequency band at down-state and up-state. Also, a comprehensive and complete electric model of the switch is proposed and simulation results agree well with the characteristics of the physical structure of the MEMS switch. Vpull-in and Vpull-out of this switch are 8.1V and 0.3V, respectively.
Language eng
DOI 10.1587/elex.10.20130746
Field of Research 090604 Microelectronics and Integrated Circuits
091306 Microelectromechanical Systems (MEMS)
Socio Economic Objective 861603 Integrated Circuits and Devices
HERDC Research category C1 Refereed article in a scholarly journal
Copyright notice ©2013, Institute of Electronics, Information and Communication Engineers
Persistent URL http://hdl.handle.net/10536/DRO/DU:30061684

Document type: Journal Article
Collection: School of Engineering
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