Graphene quantum dots directly generated from graphite via magnetron sputtering and the application in thin-film transistors

Zhu, Huihui, Liu, Ao, Xu, Yuanhong, Shan, Fukai, Li, Aihua, Wang, Jianmei, Yang,Wenrong, Barrow, Colin and Liu, Jingquan 2015, Graphene quantum dots directly generated from graphite via magnetron sputtering and the application in thin-film transistors, Carbon, vol. 88, pp. 225-232, doi: 10.1016/j.carbon.2015.03.007.

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Title Graphene quantum dots directly generated from graphite via magnetron sputtering and the application in thin-film transistors
Author(s) Zhu, Huihui
Liu, Ao
Xu, Yuanhong
Shan, Fukai
Li, Aihua
Wang, Jianmei
Yang,WenrongORCID iD for Yang,Wenrong orcid.org/0000-0001-8815-1951
Barrow, ColinORCID iD for Barrow, Colin orcid.org/0000-0002-2153-7267
Liu, Jingquan
Journal name Carbon
Volume number 88
Start page 225
End page 232
Total pages 8
Publisher Elsevier
Place of publication Amsterdam, The Netherlands
Publication date 2015-07
ISSN 0008-6223
Keyword(s) Science & Technology
Physical Sciences
Technology
Chemistry, Physical
Materials Science, Multidisciplinary
Chemistry
Materials Science
HIGH-PERFORMANCE
DOPED ZNO
ELECTRONIC-PROPERTIES
PHOTOVOLTAIC DEVICES
EMERGENT NANOLIGHTS
LOW-TEMPERATURE
LIGHT
CONVERSION
ELECTROLUMINESCENCE
FABRICATION
Summary This work presents a novel method to prepare graphene quantum dots (GQDs) directly from graphite. A composite film of GQDs and ZnO was first prepared using the composite target of graphite and ZnO via magnetron sputtering, followed with hydrochloric acid treatment and dialysis. Morphology and optical properties of the GQDs were investigated using a number of techniques. The as-prepared GQDs are 4-12 nm in size and 1-2 nm in thickness. They also exhibited typical excitation-dependent properties as expected in carbon-based quantum dots. To demonstrate the potential applications of GQDs in electronic devices, pure ZnO and GQD-ZnO thin-film transistors (TFTs) using ZrOx dielectric were fabricated and examined. The ZnO TFT incorporating the GQDs exhibited enhanced performance: an on/off current ratio of 1.7 × 107, a field-effect mobility of 17.7 cm2/Vs, a subthreshold swing voltage of 90 mV/decade. This paper provides an efficient, reproducible and eco-friendly approach for the preparation of monodisperse GQDs directly from graphite. Our results suggest that GQDs fabricated using magnetron sputtering method may envision promising applications in electronic devices.
Language eng
DOI 10.1016/j.carbon.2015.03.007
Field of Research 100703 Nanobiotechnology
030302 Nanochemistry and Supramolecular Chemistry
03 Chemical Sciences
02 Physical Sciences
09 Engineering
Socio Economic Objective 970103 Expanding Knowledge in the Chemical Sciences
HERDC Research category C1 Refereed article in a scholarly journal
ERA Research output type C Journal article
Grant ID DP130101714
Copyright notice ©2015, Elsevier
Persistent URL http://hdl.handle.net/10536/DRO/DU:30074235

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