Raman microscopic analysis of internal stress in boron-doped diamond

Bennet, Kevin E., Lee, Kendall H., Tomshine, Jonathan R., Sundin, Emma M., Kruchowski, James N., Durrer, William G., Manciu, Bianca M., Kouzani, Abbas and Manciu, Felicia S. 2015, Raman microscopic analysis of internal stress in boron-doped diamond, Materials, vol. 8, no. 5, pp. 2782-2793, doi: 10.3390/ma8052782.

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Title Raman microscopic analysis of internal stress in boron-doped diamond
Author(s) Bennet, Kevin E.
Lee, Kendall H.
Tomshine, Jonathan R.
Sundin, Emma M.
Kruchowski, James N.
Durrer, William G.
Manciu, Bianca M.
Kouzani, AbbasORCID iD for Kouzani, Abbas orcid.org/0000-0002-6292-1214
Manciu, Felicia S.
Journal name Materials
Volume number 8
Issue number 5
Start page 2782
End page 2793
Total pages 12
Publisher M D P I
Place of publication Basel, Switzerland
Publication date 2015
ISSN 1996-1944
Keyword(s) boron-doped diamond
confocal Raman mapping
induced stress
Summary Analysis of the induced stress on undoped and boron-doped diamond (BDD) thin films by confocal Raman microscopy is performed in this study to investigate its correlation with sample chemical composition and the substrate used during fabrication. Knowledge of this nature is very important to the issue of long-term stability of BDD coated neurosurgical electrodes that will be used in fast-scan cyclic voltammetry, as potential occurrence of film delaminations and dislocations during their surgical implantation can have unwanted consequences for the reliability of BDD-based biosensing electrodes. To achieve a more uniform deposition of the films on cylindrically-shaped tungsten rods, substrate rotation was employed in a custom-built chemical vapor deposition reactor. In addition to visibly preferential boron incorporation into the diamond lattice and columnar growth, the results also reveal a direct correlation between regions of pure diamond and enhanced stress. Definite stress release throughout entire film thicknesses was found in the OPEN ACCESS current Raman mapping images for higher amounts of boron addition. There is also a possible contribution to the high values of compressive stress from sp2 type carbon impurities, besides that of the expected lattice mismatch between film and substrate.
Language eng
DOI 10.3390/ma8052782
Field of Research 091306 Microelectromechanical Systems (MEMS)
090304 Medical Devices
Socio Economic Objective 861502 Medical Instruments
HERDC Research category C1 Refereed article in a scholarly journal
ERA Research output type C Journal article
Copyright notice ©2015, The Author(s)
Persistent URL http://hdl.handle.net/10536/DRO/DU:30075909

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