Frontispiece: GaN and Gax In1-x N nanoparticles with tunable indium content: synthesis and characterization

Lei, WeiWei, Willinger, Marc Georg, Antonietti, Markus and Giordano, Cristina 2015, Frontispiece: GaN and Gax In1-x N nanoparticles with tunable indium content: synthesis and characterization, Chemistry, vol. 21, no. 52, pp. 18976-18976, doi: 10.1002/chem.201585262.

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Title Frontispiece: GaN and Gax In1-x N nanoparticles with tunable indium content: synthesis and characterization
Author(s) Lei, WeiWeiORCID iD for Lei, WeiWei orcid.org/0000-0003-2698-299X
Willinger, Marc Georg
Antonietti, Markus
Giordano, Cristina
Journal name Chemistry
Volume number 21
Issue number 52
Start page 18976
End page 18976
Total pages 1
Publisher Wiley
Place of publication London, Eng.
Publication date 2015-12-14
ISSN 1521-3765
Keyword(s) gallium nitride
indium nitride
nanoparticles
sol-gel processes
urea
Summary Optoelectronic Devices A captivating peculiarity of GaInN alloys is a tunable band gap, depending on the Ga/In ratio, where the pure nitrides are bright yellow (GaN) or dark blue (InN). Gax In1-x N nanoparticles were prepared by a bottom-up approach (the urea glass route). The incorporation of an increasing amount of indium in the GaN structure is indicated by different colors (i.e., different band gaps), and the alloys are further investigated by TEM and optical microscopy. More information can be found in the Full Paper by C. Giordano et al. on page 18976 ff.
Language eng
DOI 10.1002/chem.201585262
Field of Research 100708 Nanomaterials
100712 Nanoscale Characterisation
100799 Nanotechnology not elsewhere classified
Socio Economic Objective 970109 Expanding Knowledge in Engineering
HERDC Research category C2 Other contribution to refereed journal
ERA Research output type C Journal article
Copyright notice ©2015, Wiley
Persistent URL http://hdl.handle.net/10536/DRO/DU:30082111

Document type: Journal Article
Collection: Institute for Frontier Materials
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