Multiport thru deembedding for MOSFET characterization

Brinkhoff, James, Issaoun, Ammar, Rustagi, Subhash C. and Lin, Fujiang 2008, Multiport thru deembedding for MOSFET characterization, IEEE Electron Device Letters, vol. 29, no. 8, pp. 923-926, doi: 10.1109/LED.2008.2001175.

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Title Multiport thru deembedding for MOSFET characterization
Author(s) Brinkhoff, JamesORCID iD for Brinkhoff, James orcid.org/0000-0002-0721-2458
Issaoun, Ammar
Rustagi, Subhash C.
Lin, Fujiang
Journal name IEEE Electron Device Letters
Volume number 29
Issue number 8
Start page 923
End page 926
Total pages 4
Publisher Institute of Electrical and Electronics Engineers
Place of publication New York, N.Y.
Publication date 2008-08-01
ISSN 0741-3106
Keyword(s) Multiport measurements
Deembedding
Equivalent circuits
MOSFETs
MOSFET circuits
Testing
Integrated circuit interconnections
Probes
Semiconductor device measurement
Measurement errors
Parasitic capacitance
Area measurement
Particle measurements
Language eng
DOI 10.1109/LED.2008.2001175
Field of Research 0906 Electrical And Electronic Engineering
HERDC Research category C1.1 Refereed article in a scholarly journal
Copyright notice ©2008, IEEE
Persistent URL http://hdl.handle.net/10536/DRO/DU:30086712

Document type: Journal Article
Collection: Faculty of Science, Engineering and Built Environment
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