A 60-GHz 1-V supply band-tunable power amplifier in 65-nm CMOS

Bi, Xiaojun, Guo, Yongxin, Brinkhoff, James, Jia, Lin, Wang, Lei, Xiong, Yong Zhong, Leong, Mook Seng and Lin, Fujiang 2011, A 60-GHz 1-V supply band-tunable power amplifier in 65-nm CMOS, IEEE transactions on circuits and systems II: express briefs, vol. 58, no. 11, pp. 719-723, doi: 10.1109/TCSII.2011.2168010.

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Title A 60-GHz 1-V supply band-tunable power amplifier in 65-nm CMOS
Author(s) Bi, Xiaojun
Guo, Yongxin
Brinkhoff, JamesORCID iD for Brinkhoff, James orcid.org/0000-0002-0721-2458
Jia, Lin
Wang, Lei
Xiong, Yong Zhong
Leong, Mook Seng
Lin, Fujiang
Journal name IEEE transactions on circuits and systems II: express briefs
Volume number 58
Issue number 11
Start page 719
End page 723
Total pages 5
Publisher IEEE
Place of publication Piscataway, N.J.
Publication date 2011-11
ISSN 1549-7747
Keyword(s) band tunable
millimeter-wave
integrated circuits
neutralization
power amplifier (PA)
Language eng
DOI 10.1109/TCSII.2011.2168010
Field of Research 0906 Electrical And Electronic Engineering
Socio Economic Objective 0 Not Applicable
HERDC Research category C1.1 Refereed article in a scholarly journal
Copyright notice ©2011, IEEE
Persistent URL http://hdl.handle.net/10536/DRO/DU:30086732

Document type: Journal Article
Collection: Faculty of Science, Engineering and Built Environment
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