Electrostatically confined plasma in segmented hollow cathode geometries for surface engineering

Corujeira Gallo, Santiago, Crespi, Ângela E., Cemin, Felipe, Figueroa, Carlos A. and Baumvol, Israel J. R. 2011, Electrostatically confined plasma in segmented hollow cathode geometries for surface engineering, IEEE transactions on plasma science, vol. 39, no. 11, pp. 3028-3032, doi: 10.1109/TPS.2011.2141690.

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Title Electrostatically confined plasma in segmented hollow cathode geometries for surface engineering
Author(s) Corujeira Gallo, SantiagoORCID iD for Corujeira Gallo, Santiago orcid.org/0000-0002-7305-2931
Crespi, Ângela E.
Cemin, Felipe
Figueroa, Carlos A.
Baumvol, Israel J. R.
Journal name IEEE transactions on plasma science
Volume number 39
Issue number 11
Start page 3028
End page 3032
Total pages 5
Publisher IEEE
Place of publication Piscataway, N.J.
Publication date 2011-11
ISSN 0093-3813
Summary A segmented hollow cathode (SHC) geometry was used for electrostatic confinement of plasma, and surface engineering treatments were conducted in this arrangement. The assessed processes included plasma nitriding, reactive deposition of sputtered material, and deposition of carbonaceous films by plasma-enhanced chemical vapor deposition with a bipolar pulsed-dc power supply on steel substrates. The treated specimens exhibited uniform surface morphology and deposition layers. Characterization techniques included optical microscopy, scanning electron microscopy with energy dispersive X-ray capability, and X-ray diffraction. The advantages and potential applications of the SHC arrangement are discussed in view of these results.
Language eng
DOI 10.1109/TPS.2011.2141690
Field of Research 091207 Metals and Alloy Materials
0202 Atomic, Molecular, Nuclear, Particle And Plasma Physics
0906 Electrical And Electronic Engineering
Socio Economic Objective 869999 Manufacturing not elsewhere classified
HERDC Research category C1.1 Refereed article in a scholarly journal
ERA Research output type C Journal article
Copyright notice ©2011, IEEE
Persistent URL http://hdl.handle.net/10536/DRO/DU:30088202

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