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Low-noise and small-area integrated amplifier circuit for mems-based implantable hearing aid applications

Zargarpour, Nazli, Abdi, Hamid and Bahador, Hamid Jangi 2016, Low-noise and small-area integrated amplifier circuit for mems-based implantable hearing aid applications, Microsystem technologies, pp. 1-7, doi: 10.1007/s00542-016-3166-y.

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Title Low-noise and small-area integrated amplifier circuit for mems-based implantable hearing aid applications
Author(s) Zargarpour, Nazli
Abdi, HamidORCID iD for Abdi, Hamid orcid.org/0000-0001-6597-7136
Bahador, Hamid Jangi
Journal name Microsystem technologies
Start page 1
End page 7
Total pages 7
Publisher Springer
Place of publication Berlin, Germany
Publication date 2016-10-21
ISSN 0946-7076
Summary Hearing aid devices are used by patients with hearing impairment to help with hearing problems. These devices consist of a microphone, an amplifier, and speaker modules. The author previously developed a micro-electromechanical piezoelectric diaphragm for a hearing aid device. The proposed diaphragm was in circular shape with 700 μm diameter and 10 μm thickness using AlN piezoelectric material. The design was performed in MEMS scale to offer maximum performance by the diaphragm for the human hearing frequency range. Adding to the previous work, in the present paper, a voltage amplifier circuit is designed for that piezoelectric microphone. The design is performed with respect to suitable circuit performance for the 5 Hz–22.5 kHz frequency range, small area, low noise, high gain and integration capability between the circuit and the diaphragm. The designed circuit is modeled and implemented in Cadence based on the 180 nm (0.18 μm) CMOS technology standard and the circuit layout is demonstrated with the circuit occupying an area of 0.08 mm × 0.04 mm. Simulation study is performed for assessment of the performance of the circuit. The results indicate that the frequency range of the amplifier covers the audio frequency of 5 Hz–22.5 k Hz, the amplification gain is 84.78 dB with the phase margine (PM) of 75.95°, the average power consumption of 0.216 mW, the Input noise level of 4.19 μVrms, CMRR of 133.69 dB and PSRR of 98.76 dB. The integration of the circuit with the microphone for hearing aid devices is proposed based on circuit binding method.
Notes In press
Language eng
DOI 10.1007/s00542-016-3166-y
Field of Research 090601 Circuits and Systems
090604 Microelectronics and Integrated Circuits
1005 Communications Technologies
1007 Nanotechnology
Socio Economic Objective 970109 Expanding Knowledge in Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Copyright notice ©2016, Springer-Verlag Berlin Heidelberg
Persistent URL http://hdl.handle.net/10536/DRO/DU:30088757

Document type: Journal Article
Collection: Centre for Intelligent Systems Research
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Created: Fri, 11 Nov 2016, 14:17:26 EST

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