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Engineering of nitrogen-vacancy color centers in high purity diamond by ion implantation and annealing

Orwa, J.O., Santori, C., Fu, K.M.C., Gibson, B., Simpson, D., Aharonovich, I., Stacey, A., Cimmino, A., Balog, P., Markham, M., Twitchen, D., Greentree, A.D., Beausoleil, R.G. and Prawer, S. 2011, Engineering of nitrogen-vacancy color centers in high purity diamond by ion implantation and annealing, Journal of applied physics, vol. 109, no. 8, pp. 1-7, doi: 10.1063/1.3573768.

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Title Engineering of nitrogen-vacancy color centers in high purity diamond by ion implantation and annealing
Author(s) Orwa, J.O.ORCID iD for Orwa, J.O. orcid.org/0000-0001-6041-6751
Santori, C.
Fu, K.M.C.
Gibson, B.
Simpson, D.
Aharonovich, I.
Stacey, A.
Cimmino, A.
Balog, P.
Markham, M.
Twitchen, D.
Greentree, A.D.
Beausoleil, R.G.
Prawer, S.
Journal name Journal of applied physics
Volume number 109
Issue number 8
Article ID 083530
Start page 1
End page 7
Total pages 7
Publisher American Institute of Physics
Place of publication Melville, N.Y.
Publication date 2011-04
ISSN 0021-8979
Keyword(s) Science & Technology
Physical Sciences
Physics, Applied
Physics
Summary The negatively-charged nitrogen-vacancy (NV) center is the most studied optical center in diamond and is very important for applications in quantum information science. Many proposals for integrating NV centers in quantum and sensing applications rely on their tailored fabrication in ultra pure host material. In this study, we use ion implantation to controllably introduce nitrogen into high purity, low nitrogen chemical vapor deposition diamond samples. The properties of the resulting NV centers are studied as a function of implantation temperature, annealing temperature, and implantation fluence. We compare the implanted NV centers with native NV centers present deep in the bulk of the as-grown samples. The results for implanted NV centers are promising but indicate, at this stage, that the deep native NV centers possess overall superior optical properties. In particular, the implanted NV centers obtained after annealing at 2000 °C under a stabilizing pressure of 8 GPa showed an ensemble linewidth of 0.17 nm compared to 0.61 nm after annealing at 1000 °C. Over the same temperature range, the ensemble NV-/NV 0 ratio increased by a factor of ∼5, although this was accompanied by an overall decrease in the NV count.
Language eng
DOI 10.1063/1.3573768
Field of Research 091202 Composite and Hybrid Materials
Socio Economic Objective 970109 Expanding Knowledge in Engineering
HERDC Research category C1.1 Refereed article in a scholarly journal
ERA Research output type C Journal article
Copyright notice ©2011, American Institute of Physics
Persistent URL http://hdl.handle.net/10536/DRO/DU:30091847

Document type: Journal Article
Collection: School of Engineering
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