Nickel related optical centres in diamond created by ion implantation

Orwa, J.O., Aharonovich, I., Jelezko, F., Balasubramanian, G., Balog, P., Markham, M., Twitchen, D.J., Greentree, A.D. and Prawer, S. 2010, Nickel related optical centres in diamond created by ion implantation, Journal of applied physics, vol. 107, no. 9, pp. 1-5, doi: 10.1063/1.3357374.

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Title Nickel related optical centres in diamond created by ion implantation
Author(s) Orwa, J.O.ORCID iD for Orwa, J.O.
Aharonovich, I.
Jelezko, F.
Balasubramanian, G.
Balog, P.
Markham, M.
Twitchen, D.J.
Greentree, A.D.
Prawer, S.
Journal name Journal of applied physics
Volume number 107
Issue number 9
Article ID 093512
Start page 1
End page 5
Total pages 5
Publisher American Institute of Physics
Place of publication Melville, N.Y.
Publication date 2010-05-01
ISSN 0021-8979
Keyword(s) Science & Technology
Physical Sciences
Physics, Applied
Summary Ni-related optical centres in diamond are promising as alternatives to the nitrogen vacancy (NV) centre for quantum applications and biomarking. In order to achieve the reliability and reproducibility required, a method for producing the Ni-related centres in a controllable manner needs to be established. In this study, we have attempted this control by implanting high purity CVD diamond samples with Ni and N followed by thermal annealing. Samples implanted with Ni show a new Ni-related PL peak centered at 711 nm and a well known doublet at 883/885 nm along with weak NV luminescence. The optical properties of the two Ni-related defects are investigated. In particular, an excited state lifetime of the 883/885 nm peak is measured to be 11.6 ns.
Language eng
DOI 10.1063/1.3357374
Field of Research 091202 Composite and Hybrid Materials
Socio Economic Objective 970110 Expanding Knowledge in Technology
HERDC Research category C1.1 Refereed article in a scholarly journal
ERA Research output type C Journal article
Copyright notice ©2010, American Institute of Physics
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