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Near coalescent submicron polycrystalline diamond films deposited on silicon: hydrogen bonding and thermal enhanced carbide formation

Stacey, A., Michaelson, S., Orwa, J., Rubanov, S., Prawer, S., Cowie, B.C.C. and Hoffman, A. 2009, Near coalescent submicron polycrystalline diamond films deposited on silicon: hydrogen bonding and thermal enhanced carbide formation, Journal of applied physics, vol. 106, no. 10, pp. 1-8, doi: 10.1063/1.3257255.

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Title Near coalescent submicron polycrystalline diamond films deposited on silicon: hydrogen bonding and thermal enhanced carbide formation
Author(s) Stacey, A.
Michaelson, S.
Orwa, J.ORCID iD for Orwa, J. orcid.org/0000-0001-6041-6751
Rubanov, S.
Prawer, S.
Cowie, B.C.C.
Hoffman, A.
Journal name Journal of applied physics
Volume number 106
Issue number 10
Article ID 103503
Start page 1
End page 8
Total pages 8
Publisher American Institute of Physics
Place of publication Melville, N.Y.
Publication date 2009-12-16
ISSN 0021-8979
Keyword(s) Science & Technology
Physical Sciences
Physics, Applied
Physics
Summary The influence of high temperature annealing up to 1200 °C in vacuum on ∼100 nm nearly continuous thick diamond films consisting of 30-50 nm crystallites, deposited onto silicon substrates is reported. The hydrogen bonding and phase composition of the films were studied with Raman spectroscopy, while the surface microstructure and composition were studied with high resolution scanning electron microscopy (SEM), transmission electron microscopy (TEM), and x-ray photoelectron spectroscopy (XPS), respectively. Annealing to 800-900 °C of ∼100 nm thick films results in a decrease in the intensities of the peaks associated with hydrogen bonding (Raman), as well as changes to the morphological microstructure at the film surface. Heating the films to 1000 °C resulted in the complete disappearance of the Raman peaks associated with hydrogen bonding at grain boundaries, and an increase in the relative intensity of the diamond peak relative to the graphite-related D and G Raman peaks, concomitant with changes to the microstructure (SEM and TEM). Ex situ XP analysis of the films annealed to 800 and 1000 °C provides clear evidence for the formation of SiC on the films surface and near surface region. However a sharp SiC Raman peak at 796 cm-1 appears only after annealing to 1200 °C and it is concomitant with a decrease in the Raman peaks associated with sp2 bonded carbon. Our results suggest that formation of SiC phase preferentially consumes sp2/sp hybridized carbon matrix, produced by thermal desorption of hydrogen atoms at diamond grain boundary and at the diamond film-silicon substrate interface.
Language eng
DOI 10.1063/1.3257255
Field of Research 091203 Compound Semiconductors
Socio Economic Objective 970102 Expanding Knowledge in the Physical Sciences
HERDC Research category C1.1 Refereed article in a scholarly journal
ERA Research output type C Journal article
Copyright notice ©2009, American Institute of Physics
Persistent URL http://hdl.handle.net/10536/DRO/DU:30091877

Document type: Journal Article
Collections: School of Engineering
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