Polarity-dependent forming in ion bombarded amorphous silicon memory devices

Gateru, R.G., Orwa, J.O. and Shannon, J.M. 2005, Polarity-dependent forming in ion bombarded amorphous silicon memory devices, Journal of applied physics, vol. 97, no. 2, pp. 1-4, doi: 10.1063/1.1832748.

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Title Polarity-dependent forming in ion bombarded amorphous silicon memory devices
Author(s) Gateru, R.G.
Orwa, J.O.ORCID iD for Orwa, J.O. orcid.org/0000-0001-6041-6751
Shannon, J.M.
Journal name Journal of applied physics
Volume number 97
Issue number 2
Article ID 024506
Start page 1
End page 4
Total pages 4
Publisher American Institute of Physics
Place of publication Melville, N.Y.
Publication date 2005-01-15
ISSN 0021-8979
Summary Polarity-dependent forming in ion bombarded metal-semiconductor-metal (MSM) memory devices of hydrogenated amorphous silicon is reported. It is shown that prior to ion bombardment, current transport in the MSM devices is asymmetric and is controlled by the Schottky barriers at two MS junctions. Upon bombardment, however, there is a bulk component to the current and the I-V characteristics of the devices become symmetric at low bias voltages. The forming voltage in the bombarded devices shows polarity dependence. For positive bias applied on the top contact, we find that devices form at the same electric field independent of the thickness of the amorphous silicon while for negative voltage on the top contact, the electric field needed for forming increases with the thickness. A model involving the difference in energy deposition and heat sinking for the two polarities is proposed.
Language eng
DOI 10.1063/1.1832748
Field of Research 091202 Composite and Hybrid Materials
Socio Economic Objective 970109 Expanding Knowledge in Engineering
HERDC Research category C1.1 Refereed article in a scholarly journal
ERA Research output type C Journal article
Copyright notice ©2005, American Institute of Physics
Persistent URL http://hdl.handle.net/10536/DRO/DU:30091880

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