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Forming in hydrogenated amorphous silicon metal-semiconductor-metal devices using bipolar pulse stressing

Orwa, J.O., Silva, S.R.P. and Shannon, J.M. 2005, Forming in hydrogenated amorphous silicon metal-semiconductor-metal devices using bipolar pulse stressing, Electronics letters, vol. 41, no. 2, pp. 98-100, doi: 10.1049/el:20057595.

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Title Forming in hydrogenated amorphous silicon metal-semiconductor-metal devices using bipolar pulse stressing
Author(s) Orwa, J.O.ORCID iD for Orwa, J.O. orcid.org/0000-0001-6041-6751
Silva, S.R.P.
Shannon, J.M.
Journal name Electronics letters
Volume number 41
Issue number 2
Start page 98
End page 100
Total pages 2
Publisher IEEE
Place of publication Piscataway, N.J.
Publication date 2005-01-20
ISSN 0013-5194
Summary Because of the ability to deliver large voltage and current transients and limit power dissipation, a single bipolar pulse applied through a series capacitor results in forming at lower voltages with more uniformity compared to unipolar pulses. In addition, the on-resistances following bipolar pulse stressing are more uniform compared to unipolar pulses.
Language eng
DOI 10.1049/el:20057595
Field of Research 091202 Composite and Hybrid Materials
Socio Economic Objective 970109 Expanding Knowledge in Engineering
HERDC Research category C1.1 Refereed article in a scholarly journal
ERA Research output type C Journal article
Copyright notice ©[2005, The Authors]
Persistent URL http://hdl.handle.net/10536/DRO/DU:30091882

Document type: Journal Article
Collection: School of Engineering
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