Raman investigation of damage caused by deep ion implantation in diamond

Orwa, J.O., Nugent, K.W., Jamieson, D.N. and Prawer, S. 2000, Raman investigation of damage caused by deep ion implantation in diamond, Physical review B, vol. 62, no. 9, pp. 5461-5472, doi: 10.1103/PhysRevB.62.5461.

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Title Raman investigation of damage caused by deep ion implantation in diamond
Author(s) Orwa, J.O.ORCID iD for Orwa, J.O. orcid.org/0000-0001-6041-6751
Nugent, K.W.
Jamieson, D.N.
Prawer, S.
Journal name Physical review B
Volume number 62
Issue number 9
Start page 5461
End page 5472
Total pages 12
Publisher American Physical Society
Place of publication Rodge, N.Y.
Publication date 2000-09-01
ISSN 0163-1829
Summary Raman microscopy has been employed to investigate the nature of damage created when natural type-IIa diamond is irradiated with MeV alpha particles. Three features appear in the Raman spectrum due to damage, viz., (i) the first-order diamond Raman line is broadened and downshifted, (ii) broad features appear which are a measure of the vibrational density of states of ion-beam-amorphized diamond, and (iii) the damage causes the appearance of sharp defect-induced Raman peaks at 1490 and 1630 cm-1. For damage below an amorphization threshold, a linear relationship exists between the full width at half maximum and frequency shift, which shows that these are Kramers-Kronig related. The annealing behavior of the sharp Raman feature at 1490 cm-1 suggests that this peak is associated with vacancies with an activation energy for annealing of 4.06 eV, while the 1630-cm-1 peak is due to an interstitial related defect with an activation energy of 1.2 eV. For sub-MeV ion irradiation, damage beyond the critical amorphization level usually leads to relaxation of the diamond structure to graphite upon thermal annealing. However, for MeV ion irradiation, it was found that annealing, even when the ion induced damage level is well above the amorphization threshold, could restore the original diamond structure. We attribute this result to the high internal pressure the damaged layer is subjected to which does not allow relaxation to graphitically bonded structures.
Language eng
DOI 10.1103/PhysRevB.62.5461
Field of Research 020402 Condensed Matter Imaging
Socio Economic Objective 970102 Expanding Knowledge in the Physical Sciences
HERDC Research category C1.1 Refereed article in a scholarly journal
ERA Research output type C Journal article
Copyright notice ©2000, American Physical Society
Persistent URL http://hdl.handle.net/10536/DRO/DU:30091892

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