Two-dimensional electron transport in selectively doped n-AlGaAs/InGaAs/GaAs pseudomorphic structures

Bhattacharyya, Keya, Orwa, J.O. and Goodnick, S.M. 1993, Two-dimensional electron transport in selectively doped n-AlGaAs/InGaAs/GaAs pseudomorphic structures, Journal of applied physics, vol. 73, no. 9, pp. 4396-4403, doi: 10.1063/1.352777.

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Title Two-dimensional electron transport in selectively doped n-AlGaAs/InGaAs/GaAs pseudomorphic structures
Author(s) Bhattacharyya, Keya
Orwa, J.O.ORCID iD for Orwa, J.O.
Goodnick, S.M.
Journal name Journal of applied physics
Volume number 73
Issue number 9
Start page 4396
End page 4403
Total pages 8
Publisher American Institute of Physics
Place of publication Melville, N.Y.
Publication date 1993-05-01
ISSN 0021-8979
Summary The transport properties of the two-dimensional electron gas in selectively doped AlyGa1-yAs/InxGa1-xAs/GaAs pseudomorphic structures grown by molecular beam epitaxy are studied. The mobility in the temperature range from 1.7 to 300 K is reported based on the Hall effect and high-field magnetoconductance measurements. The relative strengths of various scattering mechanisms are assessed through a numerical iterative solution of the Boltzmann equation and compared with the experimental Hall mobility versus temperature data. Comparison shows that at low temperature, alloy scattering determines the low-field mobility with a suitable choice of alloy scattering potential. At room temperature, polar-optical phonon scattering is the dominant mechanism. However, alloy scattering also contributes in reducing the room-temperature mobility by approximately 20% compared to polar optical scattering alone.
Language eng
DOI 10.1063/1.352777
Field of Research 091299 Materials Engineering not elsewhere classified
02 Physical Sciences
09 Engineering
Socio Economic Objective 0 Not Applicable
HERDC Research category C1.1 Refereed article in a scholarly journal
ERA Research output type C Journal article
Copyright notice ©1993, American Institute of Physics
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