Device characterization for distortion prediction including memory effects

Brinkhoff, James and Parker, Anthony E. 2005, Device characterization for distortion prediction including memory effects, IEEE Microwave and Wireless Components Letters, vol. 15, no. 3, pp. 171-173, doi: 10.1109/LMWC.2005.844215.

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Title Device characterization for distortion prediction including memory effects
Author(s) Brinkhoff, JamesORCID iD for Brinkhoff, James orcid.org/0000-0002-0721-2458
Parker, Anthony E.
Journal name IEEE Microwave and Wireless Components Letters
Volume number 15
Issue number 3
Start page 171
End page 173
Total pages 3
Publisher Institute of Electrical and Electronics Engineers (IEEE)
Place of publication Piscataway, N.J.
Publication date 2005-03-14
ISSN 1531-1309
Keyword(s) field effect transistor (FET)amplifiers
intermodulation distortion
memory effects
distortion measurement
circuits
frequency measurement
voltage
nonlinear distortion
pulse measurements
dynamic range
predictive models
data mining
Science & Technology
Technology
Engineering, Electrical & Electronic
Engineering
field effect transistor (FET) amplifiers
MODEL
EXTRACTION
Language eng
DOI 10.1109/LMWC.2005.844215
Field of Research 0906 Electrical And Electronic Engineering
1005 Communications Technologies
0205 Optical Physics
HERDC Research category CN.1 Other journal article
Copyright notice ©2005, IEEE
Persistent URL http://hdl.handle.net/10536/DRO/DU:30096035

Document type: Journal Article
Collection: Faculty of Science, Engineering and Built Environment
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