Device characterization for distortion prediction including memory effects

Brinkhoff, James and Parker, Anthony E. 2005, Device characterization for distortion prediction including memory effects, IEEE Microwave and Wireless Components Letters, vol. 15, no. 3, pp. 171-173, doi: 10.1109/LMWC.2005.844215.

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Title Device characterization for distortion prediction including memory effects
Author(s) Brinkhoff, JamesORCID iD for Brinkhoff, James
Parker, Anthony E.
Journal name IEEE Microwave and Wireless Components Letters
Volume number 15
Issue number 3
Start page 171
End page 173
Total pages 3
Publisher Institute of Electrical and Electronics Engineers (IEEE)
Place of publication Piscataway, N.J.
Publication date 2005-03-14
ISSN 1531-1309
Keyword(s) field effect transistor (FET)amplifiers
intermodulation distortion
memory effects
distortion measurement
frequency measurement
nonlinear distortion
pulse measurements
dynamic range
predictive models
data mining
Science & Technology
Engineering, Electrical & Electronic
field effect transistor (FET) amplifiers
Language eng
DOI 10.1109/LMWC.2005.844215
Field of Research 0906 Electrical And Electronic Engineering
1005 Communications Technologies
0205 Optical Physics
HERDC Research category CN.1 Other journal article
Copyright notice ©2005, IEEE
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Document type: Journal Article
Collection: Faculty of Science, Engineering and Built Environment
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