Baseband impedance and linearization of FET circuits

Brinkhoff, James, Parker, Anthony Edward and Leung, Martin 2003, Baseband impedance and linearization of FET circuits, IEEE transactions on microwave theory and techniques, vol. 51, no. 12, pp. 2523-2530, doi: 10.1109/TMTT.2003.819208.

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Title Baseband impedance and linearization of FET circuits
Author(s) Brinkhoff, JamesORCID iD for Brinkhoff, James orcid.org/0000-0002-0721-2458
Parker, Anthony Edward
Leung, Martin
Journal name IEEE transactions on microwave theory and techniques
Volume number 51
Issue number 12
Start page 2523
End page 2530
Total pages 8
Publisher IEEE
Place of publication Piscataway, N.J.
Publication date 2003-12
ISSN 0018-9480
1557-9670
Keyword(s) field-effect transistor (FET) amplifiers
harmonic distortion
impedance
intermodulation distortion
linearization
memory effects
Language eng
DOI 10.1109/TMTT.2003.819208
Field of Research 0906 Electrical And Electronic Engineering
1005 Communications Technologies
HERDC Research category C1.1 Refereed article in a scholarly journal
Copyright notice ©2003, IEEE
Persistent URL http://hdl.handle.net/10536/DRO/DU:30096037

Document type: Journal Article
Collection: Faculty of Science, Engineering and Built Environment
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