Implication of baseband impedance and bias for FET amplifier linearization

Brinkhoff, James and Parker, AE 2003, Implication of baseband impedance and bias for FET amplifier linearization, in 2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3, IEEE, Piscataway, N.J., pp. 781-784, doi: 10.1109/MWSYM.2003.1212487.

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Title Implication of baseband impedance and bias for FET amplifier linearization
Author(s) Brinkhoff, JamesORCID iD for Brinkhoff, James orcid.org/0000-0002-0721-2458
Parker, AE
Conference name IEEE MTT-S International Microwave Symposium
Conference location PHILADELPHIA, PA
Conference dates 2003/06/08 - 2003/06/13
Title of proceedings 2003 IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST, VOLS 1-3
Editor(s) Thal, H
Publication date 2003
Series IEEE MTT-S INTERNATIONAL MICROWAVE SYMPOSIUM DIGEST
Start page 781
End page 784
Total pages 4
Publisher IEEE
Place of publication Piscataway, N.J.
Keyword(s) Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Optics
Engineering
SIMULATION
MEMORY
ISBN 0-7803-7695-1
ISSN 0149-645X
Language eng
DOI 10.1109/MWSYM.2003.1212487
HERDC Research category EN.1 Other conference paper
Persistent URL http://hdl.handle.net/10536/DRO/DU:30096038

Document type: Conference Paper
Collection: Faculty of Science, Engineering and Built Environment
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