A two dimensional analytical model of drain to source current and subthreshold slope of a triple material double gate MOSFET

Mahmud, M.A. and Subrina, S. 2015, A two dimensional analytical model of drain to source current and subthreshold slope of a triple material double gate MOSFET, in ICECE 2014 : Proceedings of the 8th International Conference on Electrical and Computer Engineering, IEEE, Piscataway, N.J., pp. 92-95, doi: 10.1109/ICECE.2014.7026926.

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Title A two dimensional analytical model of drain to source current and subthreshold slope of a triple material double gate MOSFET
Author(s) Mahmud, M.A.ORCID iD for Mahmud, M.A. orcid.org/0000-0002-5302-5338
Subrina, S.
Conference name Electrical and Computer Engineering. International Conference (8th : 2014 : Dhaka, Bangladesh)
Conference location Dhaka, Bangladesh
Conference dates 2014/12/20 - 2014/12/22
Title of proceedings ICECE 2014 : Proceedings of the 8th International Conference on Electrical and Computer Engineering
Publication date 2015
Conference series Electrical and Computer Engineering International Conference
Start page 92
End page 95
Total pages 4
Publisher IEEE
Place of publication Piscataway, N.J.
Keyword(s) drain to source current
gate engineering
leakage current
pinch off voltage
subthreshold slope
ISBN 9781479941667
Language eng
DOI 10.1109/ICECE.2014.7026926
HERDC Research category E1.1 Full written paper - refereed
ERA Research output type E Conference publication
Copyright notice ©2014, IEEE
Persistent URL http://hdl.handle.net/10536/DRO/DU:30101179

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