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Electronic properties of multiple adjacent δ-doped Si:P layers: the approach to monolayer confinement

Budi, A., Drumm, D.W., Per, M.C., Tregonning, A., Russo, S.P. and Hollenberg, L.C.L. 2012, Electronic properties of multiple adjacent δ-doped Si:P layers: the approach to monolayer confinement, Physical Review B - condensed matter and materials physics, vol. 86, no. 16, pp. 1-6, doi: 10.1103/PhysRevB.86.165123.

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Title Electronic properties of multiple adjacent δ-doped Si:P layers: the approach to monolayer confinement
Author(s) Budi, A.
Drumm, D.W.ORCID iD for Drumm, D.W. orcid.org/0000-0001-5663-1387
Per, M.C.
Tregonning, A.
Russo, S.P.
Hollenberg, L.C.L.
Journal name Physical Review B - condensed matter and materials physics
Volume number 86
Issue number 16
Article ID 165123
Start page 1
End page 6
Total pages 6
Publisher American Physical Society
Place of publication College Park, Md.
Publication date 2012-10-16
ISSN 1098-0121
1550-235X
Keyword(s) Science & Technology
Physical Sciences
Physics, Condensed Matter
Physics
ATOMIC-SCALE
SILICON
FABRICATION
DEVICES
Language eng
DOI 10.1103/PhysRevB.86.165123
Field of Research 02 Physical Sciences
03 Chemical Sciences
HERDC Research category C1 Refereed article in a scholarly journal
Copyright notice ©2012, American Physical Society
Free to Read? Yes
Persistent URL http://hdl.handle.net/10536/DRO/DU:30110671

Document type: Journal Article
Collections: Faculty of Health
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Every reasonable effort has been made to ensure that permission has been obtained for items included in DRO. If you believe that your rights have been infringed by this repository, please contact drosupport@deakin.edu.au.