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Ab Initio electronic properties of monolayer phosphorus nanowires in silicon

Drumm, D.W., Smith, J.S., Per, M.C., Budi, A., Hollenberg, L.C.L. and Russo, S.P. 2013, Ab Initio electronic properties of monolayer phosphorus nanowires in silicon, Physical review letters, vol. 110, no. 12, pp. 1-5, doi: 10.1103/PhysRevLett.110.126802.

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Title Ab Initio electronic properties of monolayer phosphorus nanowires in silicon
Author(s) Drumm, D.W.ORCID iD for Drumm, D.W. orcid.org/0000-0001-5663-1387
Smith, J.S.
Per, M.C.
Budi, A.
Hollenberg, L.C.L.
Russo, S.P.
Journal name Physical review letters
Volume number 110
Issue number 12
Article ID 126802
Start page 1
End page 5
Total pages 5
Publisher American Physical Society
Place of publication College Park, Md.
Publication date 2013-03-22
ISSN 1079-7114
Keyword(s) Science & Technology
Physical Sciences
Physics, Multidisciplinary
Physics
QUANTUM DOTS
Language eng
DOI 10.1103/PhysRevLett.110.126802
Field of Research 02 Physical Sciences
HERDC Research category C1 Refereed article in a scholarly journal
Copyright notice ©2013, American Physical Society
Free to Read? Yes
Persistent URL http://hdl.handle.net/10536/DRO/DU:30110672

Document type: Journal Article
Collections: Faculty of Health
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Every reasonable effort has been made to ensure that permission has been obtained for items included in DRO. If you believe that your rights have been infringed by this repository, please contact drosupport@deakin.edu.au.