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Ab initio electronic properties of dual phosphorus monolayers in silicon

Drumm, Daniel W, Per, Manolo C, Budi, Akin, Hollenberg, Lloyd C and Russo, Salvy P 2014, Ab initio electronic properties of dual phosphorus monolayers in silicon, Nanoscale research letters, vol. 9, no. 1, pp. 1-10, doi: 10.1186/1556-276X-9-443.

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Title Ab initio electronic properties of dual phosphorus monolayers in silicon
Author(s) Drumm, Daniel WORCID iD for Drumm, Daniel W orcid.org/0000-0001-5663-1387
Per, Manolo C
Budi, Akin
Hollenberg, Lloyd C
Russo, Salvy P
Journal name Nanoscale research letters
Volume number 9
Issue number 1
Article ID 443
Start page 1
End page 10
Total pages 10
Publisher SpringerOpen
Place of publication Berlin, Germany
Publication date 2014
ISSN 1931-7573
Keyword(s) ab initio
bilayers
density functional theory
phosphorus in silicon
science & technology
technology
physical sciences
nanoscience & nanotechnology
materials science
physics
Summary In the midst of the epitaxial circuitry revolution in silicon technology, we look ahead to the next paradigm shift: effective use of the third dimension - in particular, its combination with epitaxial technology. We perform ab initio calculations of atomically thin epitaxial bilayers in silicon, investigating the fundamental electronic properties of monolayer pairs. Quantitative band splittings and the electronic density are presented, along with effects of the layers’ relative alignment and comments on disordered systems, and for the first time, the effective electronic widths of such device components are calculated.
Language eng
DOI 10.1186/1556-276X-9-443
Field of Research 0204 Condensed Matter Physics
0912 Materials Engineering
1007 Nanotechnology
HERDC Research category C1 Refereed article in a scholarly journal
Free to Read? Yes
Use Rights Creative Commons Attribution licence
Persistent URL http://hdl.handle.net/10536/DRO/DU:30110675

Document type: Journal Article
Collections: Faculty of Health
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Every reasonable effort has been made to ensure that permission has been obtained for items included in DRO. If you believe that your rights have been infringed by this repository, please contact drosupport@deakin.edu.au.