Surface-gate-defined single-electron transistor in a MoS2 bilayer
Javaid, M, Drumm, Daniel W, Russo, Salvy P and Greentree, Andrew D 2017, Surface-gate-defined single-electron transistor in a MoS2 bilayer, Nanotechnology, vol. 28, no. 12, pp. 1-9, doi: 10.1088/1361-6528/aa5ce0.
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Surface-gate-defined single-electron transistor in a MoS2 bilayer
We report the multi-scale modeling and design of a gate-defined single-electron transistor in a MoS2 bilayer. By combining density-functional theory and finite-element analysis, we design a surface gate structure to electrostatically define and tune a quantum dot and its associated tunnel barriers in the MoS2 bilayer. Our approach suggests new pathways for the creation of novel quantum electronic devices in two-dimensional materials.
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