Dielectric engineering of a boron nitride/hafnium oxide heterostructure for high-performance 2D field effect transistors

Zou, Xuming, Huang, Chun-Wei, Wang, Lifeng, Yin, Long-Jing, Li, Wenqing, Wang, Jingli, Wu, Bin, Liu, Yungi, Yao, Qian, Jiang, Changzhong, Wu, Wen-Wei, He, Lin, Chen, Shanshan, Ho, Johnny C. and Liao, Lei 2016, Dielectric engineering of a boron nitride/hafnium oxide heterostructure for high-performance 2D field effect transistors, Advanced materials, vol. 28, no. 10, pp. 2062-2069, doi: 10.1002/adma.201505205.

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Title Dielectric engineering of a boron nitride/hafnium oxide heterostructure for high-performance 2D field effect transistors
Author(s) Zou, Xuming
Huang, Chun-Wei
Wang, LifengORCID iD for Wang, Lifeng orcid.org/0000-0002-9334-6873
Yin, Long-Jing
Li, Wenqing
Wang, Jingli
Wu, Bin
Liu, Yungi
Yao, Qian
Jiang, Changzhong
Wu, Wen-Wei
He, Lin
Chen, Shanshan
Ho, Johnny C.
Liao, Lei
Journal name Advanced materials
Volume number 28
Issue number 10
Start page 2062
End page 2069
Total pages 8
Publisher Wiley
Place of publication Chichester, Eng.
Publication date 2016-03
ISSN 0935-9648
1521-4095
Language eng
DOI 10.1002/adma.201505205
Indigenous content off
Field of Research 02 Physical Sciences
03 Chemical Sciences
09 Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30121888

Document type: Journal Article
Collections: Institute for Frontier Materials
GTP Research
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