Phase-engineering-driven enhanced electronic and optoelectronic performance of multilayer In2Se3 nanosheets

Feng, Wei, Gao, Feng, Hu, Yunxia, Dai, Mingjin, Liu, He, Wang, Lifeng and Hu, PingAn 2018, Phase-engineering-driven enhanced electronic and optoelectronic performance of multilayer In2Se3 nanosheets, ACS applied materials and interfaces, vol. 10, no. 33, pp. 27584-27588, doi: 10.1021/acsami.8b10194.

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Title Phase-engineering-driven enhanced electronic and optoelectronic performance of multilayer In2Se3 nanosheets
Author(s) Feng, Wei
Gao, Feng
Hu, Yunxia
Dai, Mingjin
Liu, He
Wang, LifengORCID iD for Wang, Lifeng orcid.org/0000-0002-9334-6873
Hu, PingAn
Journal name ACS applied materials and interfaces
Volume number 10
Issue number 33
Start page 27584
End page 27588
Total pages 5
Publisher American Chemical Society
Place of publication Washington, D.C.
Publication date 2018-08-22
ISSN 1944-8252
Keyword(s) In2Se3
Field-effect transistors
Phase-engineering
Photodetectors
Thermal-annealing
Language eng
DOI 10.1021/acsami.8b10194
Field of Research 0904 Chemical Engineering
0303 Macromolecular and Materials Chemistry
0306 Physical Chemistry (incl. Structural)
HERDC Research category C1 Refereed article in a scholarly journal
Copyright notice ©2018, American Chemical Society
Persistent URL http://hdl.handle.net/10536/DRO/DU:30121897

Document type: Journal Article
Collections: Institute for Frontier Materials
GTP Research
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