High-Performance Devices Based on InSe−In1−xGaxSe Van der Waals Heterojunctions

Yu, Miaomiao, Hu, Yunxia, Gao, Feng, Dai, Mingjin, Wang, Lifeng, Hu, PingAn and Feng, Wei 2020, High-Performance Devices Based on InSe−In1−xGaxSe Van der Waals Heterojunctions, ACS Applied Materials and Interfaces, vol. 12, no. 22, pp. 24978-24983, doi: 10.1021/acsami.0c03206.

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Title High-Performance Devices Based on InSe−In1−xGaxSe Van der Waals Heterojunctions
Formatted title High-Performance Devices Based on InSe−In1-xGaxSe Van der Waals Heterojunctions
Author(s) Yu, Miaomiao
Hu, Yunxia
Gao, Feng
Dai, Mingjin
Wang, LifengORCID iD for Wang, Lifeng orcid.org/0000-0002-9334-6873
Hu, PingAn
Feng, Wei
Journal name ACS Applied Materials and Interfaces
Volume number 12
Issue number 22
Start page 24978
End page 24983
Total pages 6
Publisher American Chemical Society
Place of publication Washington, D.C.
Publication date 2020-06-03
ISSN 1944-8244
1944-8252
Keyword(s) multilayer InSe
In1−xGaxSe alloys
heterostructure
diode
photodetector
Language eng
DOI 10.1021/acsami.0c03206
Indigenous content off
Field of Research 0904 Chemical Engineering
0303 Macromolecular and Materials Chemistry
0306 Physical Chemistry (incl. Structural)
HERDC Research category C1 Refereed article in a scholarly journal
Copyright notice ©2020, American Chemical Society
Persistent URL http://hdl.handle.net/10536/DRO/DU:30139526

Document type: Journal Article
Collections: Institute for Frontier Materials
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