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Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET with Reduced Self Heating

Russell, Stephen A.O., Perez-Tomas, Amador, McConville, Christopher F., Fisher, Craig A., Hamilton, Dean P., Mawby, Philip A. and Jennings, Michael R. 2017, Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET with Reduced Self Heating, IEEE Journal of the Electron Devices Society, vol. 5, no. 4, pp. 256-261, doi: 10.1109/JEDS.2017.2706321.

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Title Heteroepitaxial Beta-Ga2O3 on 4H-SiC for an FET with Reduced Self Heating
Author(s) Russell, Stephen A.O.
Perez-Tomas, Amador
McConville, Christopher F.ORCID iD for McConville, Christopher F. orcid.org/0000-0003-1040-2794
Fisher, Craig A.
Hamilton, Dean P.
Mawby, Philip A.
Jennings, Michael R.
Journal name IEEE Journal of the Electron Devices Society
Volume number 5
Issue number 4
Start page 256
End page 261
Total pages 6
Publisher IEEE
Place of publication Piscataway, N.J.
Publication date 2017-07
ISSN 2168-6734
2168-6734
Keyword(s) Science & Technology
Technology
Engineering, Electrical & Electronic
Engineering
FET
gallium oxide
molecular beam epitaxy
normally-off
self-heating
silicon carbide
threshold voltage
PERFORMANCE
TRANSISTORS
Language eng
DOI 10.1109/JEDS.2017.2706321
Indigenous content off
Field of Research 1007 Nanotechnology
0906 Electrical and Electronic Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Free to Read? Yes
Persistent URL http://hdl.handle.net/10536/DRO/DU:30141972

Document type: Journal Article
Collections: Office of the Deputy Vice-Chancellor (Research)
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Every reasonable effort has been made to ensure that permission has been obtained for items included in DRO. If you believe that your rights have been infringed by this repository, please contact drosupport@deakin.edu.au.