Ordered-vacancy-enabled indium sulphide printed in wafer-scale with enhanced electron mobility

Jannat, A., Yao, Q., Zavabeti, A., Syed, N., Zhang, B.Y., Ahmed, T., Kuriakose, S., Mohiuddin, M., Pillai, N., Haque, F., Ren, G., Zhu, D.M., Cheng, N., Du, Y., Tawfik, S.A., Spencer, M.J.S., Murdoch, B.J., Wang, L., McConville, C., Walia, S., Daeneke, T., Zhu, L. and Ou, J.Z. 2020, Ordered-vacancy-enabled indium sulphide printed in wafer-scale with enhanced electron mobility, Materials Horizons, vol. 7, no. 3, pp. 827-834, doi: 10.1039/c9mh01365b.

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Title Ordered-vacancy-enabled indium sulphide printed in wafer-scale with enhanced electron mobility
Author(s) Jannat, A.
Yao, Q.
Zavabeti, A.
Syed, N.
Zhang, B.Y.
Ahmed, T.
Kuriakose, S.
Mohiuddin, M.
Pillai, N.
Haque, F.
Ren, G.
Zhu, D.M.
Cheng, N.
Du, Y.
Tawfik, S.A.
Spencer, M.J.S.
Murdoch, B.J.
Wang, L.
McConville, C.ORCID iD for McConville, C. orcid.org/0000-0003-1040-2794
Walia, S.
Daeneke, T.
Zhu, L.
Ou, J.Z.
Journal name Materials Horizons
Volume number 7
Issue number 3
Start page 827
End page 834
Total pages 8
Publisher Royal Society of Chemistry
Place of publication London, Eng.
Publication date 2020
ISSN 2051-6347
Keyword(s) Science & Technology
Physical Sciences
Chemistry, Multidisciplinary
Materials Science, Multidisciplinary
Materials Science
Summary The unique and long-range ordered-vacancy structure in wafer-scale grown single-unit-cell-thick In2S3 facilitates excellent electronic performance.
Language eng
DOI 10.1039/c9mh01365b
Indigenous content off
Field of Research 0303 Macromolecular and Materials Chemistry
0904 Chemical Engineering
0912 Materials Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142020

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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