Multilayer InSb diodes grown by molecular beam epitaxy for near ambient temperature operation

Ashley, Tim, Dean, AB, Elliott, Charles Thomas, Houlton, MR, McConville, Christopher F, Tarry, Howard A and Whitehouse, Colin R 1991, Multilayer InSb diodes grown by molecular beam epitaxy for near ambient temperature operation, Proceedings of SPIE - The International Society for Optical Engineering, vol. 1361, no. pt 1, pp. 238-244, doi: 10.1117/12.24426.

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Title Multilayer InSb diodes grown by molecular beam epitaxy for near ambient temperature operation
Author(s) Ashley, Tim
Dean, AB
Elliott, Charles Thomas
Houlton, MR
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Tarry, Howard A
Whitehouse, Colin R
Journal name Proceedings of SPIE - The International Society for Optical Engineering
Volume number 1361
Issue number pt 1
Start page 238
End page 244
Total pages 7
Publisher SPIE
Publication date 1991-01-01
ISSN 0277-786X
Language eng
DOI 10.1117/12.24426
Indigenous content off
HERDC Research category C1.1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142161

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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