InSb n-Channel Enhancement Mode Misfet Grown by Molecular Beam Epitaxy

Ashley, T, Dean, AB, Elliott, CT, McConville, Christopher and Whitehouse, CR 1989, InSb n-Channel Enhancement Mode Misfet Grown by Molecular Beam Epitaxy, Electronics Letters, vol. 25, no. 4, pp. 289-290, doi: 10.1049/el:19890201.


Title InSb n-Channel Enhancement Mode Misfet Grown by Molecular Beam Epitaxy
Author(s) Ashley, T
Dean, AB
Elliott, CT
McConville, ChristopherORCID iD for McConville, Christopher orcid.org/0000-0003-1040-2794
Whitehouse, CR
Journal name Electronics Letters
Volume number 25
Issue number 4
Start page 289
End page 290
Total pages 2
Publisher IEEE
Place of publication Piscataway, N.J.
Publication date 1989-02-16
ISSN 0013-5194
Keyword(s) Science & Technology
Technology
Engineering, Electrical & Electronic
Engineering
Language eng
DOI 10.1049/el:19890201
Indigenous content off
Field of Research 0801 Artificial Intelligence and Image Processing
0906 Electrical and Electronic Engineering
1005 Communications Technologies
HERDC Research category C2.1 Other contribution to refereed journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142187

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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