Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy

Williams, GM, Whitehouse, CR, McConville, Christopher F, Cullis, AG, Ashley, T, Courtney, SJ and Elliott, CT 1988, Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy, Applied Physics Letters, vol. 53, no. 13, pp. 1189-1191, doi: 10.1063/1.100405.

Title Heteroepitaxial growth of InSb on (100)GaAs using molecular beam epitaxy
Author(s) Williams, GM
Whitehouse, CR
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Cullis, AG
Ashley, T
Courtney, SJ
Elliott, CT
Journal name Applied Physics Letters
Volume number 53
Issue number 13
Start page 1189
End page 1191
Total pages 3
Publication date 1988-12-01
ISSN 0003-6951
Keyword(s) Science & Technology
Physical Sciences
Physics, Applied
Language eng
DOI 10.1063/1.100405
Indigenous content off
Field of Research 02 Physical Sciences
09 Engineering
10 Technology
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142190

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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