Damage-induced changes in the electronic properties of InSb(100): Implications for surface preparation

Yuen, WT, Schweitzer, MO, Jones, TS, McConville, Christopher F, Johnson, EA, MacKinnon, A, Richardson, NV and Stradling, RA 1993, Damage-induced changes in the electronic properties of InSb(100): Implications for surface preparation, Semiconductor Science and Technology, vol. 8, no. 1S, pp. S396-S399, doi: 10.1088/0268-1242/8/1S/088.

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Title Damage-induced changes in the electronic properties of InSb(100): Implications for surface preparation
Author(s) Yuen, WT
Schweitzer, MO
Jones, TS
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Johnson, EA
MacKinnon, A
Richardson, NV
Stradling, RA
Journal name Semiconductor Science and Technology
Volume number 8
Issue number 1S
Start page S396
End page S399
Total pages 4
Publisher IOP PUBLISHING LTD
Place of publication SOUTHAMPTON, ENGLAND
Publication date 1993-12-01
ISSN 0268-1242
1361-6641
Keyword(s) Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Materials Science, Multidisciplinary
Physics, Condensed Matter
Engineering
Materials Science
Physics
ENERGY LOSS SPECTROSCOPY
DOPED INSB
LAYERS
GAAS
Language eng
DOI 10.1088/0268-1242/8/1S/088
Indigenous content off
Field of Research 0204 Condensed Matter Physics
0906 Electrical and Electronic Engineering
0912 Materials Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142248

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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