Imaging ion-bombarded III-V semiconductor surfaces: A scanning tunnelling microscopy study of InSb(100)

Schweitzer, MO, Leibsle, FM, Jones, TS, McConville, Christopher F and Richardson, NV 1993, Imaging ion-bombarded III-V semiconductor surfaces: A scanning tunnelling microscopy study of InSb(100), Semiconductor Science and Technology, vol. 8, no. 1S, pp. S342-S344, doi: 10.1088/0268-1242/8/1S/076.

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Title Imaging ion-bombarded III-V semiconductor surfaces: A scanning tunnelling microscopy study of InSb(100)
Author(s) Schweitzer, MO
Leibsle, FM
Jones, TS
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Richardson, NV
Journal name Semiconductor Science and Technology
Volume number 8
Issue number 1S
Start page S342
End page S344
Total pages 3
Publisher IOP PUBLISHING LTD
Place of publication SOUTHAMPTON, ENGLAND
Publication date 1993-12-01
ISSN 0268-1242
1361-6641
Keyword(s) Science & Technology
Technology
Physical Sciences
Engineering, Electrical & Electronic
Materials Science, Multidisciplinary
Physics, Condensed Matter
Engineering
Materials Science
Physics
DAMAGE
Language eng
DOI 10.1088/0268-1242/8/1S/076
Indigenous content off
Field of Research 0204 Condensed Matter Physics
0906 Electrical and Electronic Engineering
0912 Materials Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142249

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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Citation counts: TR Web of Science Citation Count  Cited 8 times in TR Web of Science
Scopus Citation Count Cited 10 times in Scopus
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