Influence of surfactant coverage on epitaxial growth of Ge on Si(001)

Katayama, M, Nakayama, T, Aono, M and McConville, Christopher F 1996, Influence of surfactant coverage on epitaxial growth of Ge on Si(001), Physical Review B - Condensed Matter and Materials Physics, vol. 54, no. 12, pp. 8600-8604, doi: 10.1103/PhysRevB.54.8600.

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Title Influence of surfactant coverage on epitaxial growth of Ge on Si(001)
Author(s) Katayama, M
Nakayama, T
Aono, M
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Journal name Physical Review B - Condensed Matter and Materials Physics
Volume number 54
Issue number 12
Start page 8600
End page 8604
Total pages 5
Publisher AMERICAN PHYSICAL SOC
Place of publication United States
Publication date 1996-01-01
ISSN 1098-0121
1550-235X
Keyword(s) Science & Technology
Technology
Physical Sciences
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
Materials Science
Physics
SCATTERING SPECTROSCOPY CAICISS
SI
SUPERLATTICES
SILICON
SB
Language eng
DOI 10.1103/PhysRevB.54.8600
Indigenous content off
Field of Research 02 Physical Sciences
03 Chemical Sciences
09 Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142266

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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