Spatial distribution of in during the initial stages of growth of InAs on GaAs(001)-c(4 × 4)

Belk, JG, Sudijono, JL, Holmes, DM, McConville, Christopher F, Jones, TS and Joyce, BA 1996, Spatial distribution of in during the initial stages of growth of InAs on GaAs(001)-c(4 × 4), Surface Science, vol. 365, no. 3, pp. 735-742, doi: 10.1016/0039-6028(96)00757-1.

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Title Spatial distribution of in during the initial stages of growth of InAs on GaAs(001)-c(4 × 4)
Author(s) Belk, JG
Sudijono, JL
Holmes, DM
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Jones, TS
Joyce, BA
Journal name Surface Science
Volume number 365
Issue number 3
Start page 735
End page 742
Total pages 8
Publisher ELSEVIER SCIENCE BV
Publication date 1996-10-01
ISSN 0039-6028
Keyword(s) Science & Technology
Physical Sciences
Chemistry, Physical
Physics, Condensed Matter
Chemistry
Physics
adsorption kinetics
atom-solid reactions
chemisorption
epitaxy
gallium arsenide
growth
indium arsenide
molecular beam epitaxy
quantum wells
reflection high-energy electron diffraction (RHEED)
scanning tunneling microscopy
semiconducting films
semiconducting surfaces
semiconductor-semiconductor interfaces
single crystal surfaces
solid-gas interfaces
surface diffusion
surface structure, morphology, roughness, and topography
SCANNING-TUNNELING-MICROSCOPY
QUANTUM-WELLS
SURFACE SEGREGATION
GAAS
HETEROSTRUCTURES
INAS/GAAS
ATOMS
MBE
Language eng
DOI 10.1016/0039-6028(96)00757-1
Indigenous content off
Field of Research 0204 Condensed Matter Physics
0206 Quantum Physics
0306 Physical Chemistry (incl. Structural)
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142268

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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