Time-of-flight medium energy ion scattering study of epitaxial Si/Si<inf>1-x</inf>Ge<inf>x</inf> superlattice structures

McConville, Christopher F, Noakes, TCQ, Sugden, S, Hucknell, PK and Sofield, CJ 1996, Time-of-flight medium energy ion scattering study of epitaxial Si/Si1-xGex superlattice structures, Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, vol. 118, no. 1-4, pp. 573-577, doi: 10.1016/0168-583X(96)00260-1.

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Title Time-of-flight medium energy ion scattering study of epitaxial Si/Si1-xGex superlattice structures
Author(s) McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Noakes, TCQ
Sugden, S
Hucknell, PK
Sofield, CJ
Journal name Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
Volume number 118
Issue number 1-4
Start page 573
End page 577
Total pages 5
Publisher ELSEVIER SCIENCE BV
Place of publication ARIZONA STATE UNIV CAMPUS, TEMPE, AZ
Publication date 1996-01-01
ISSN 0168-583X
Keyword(s) Science & Technology
Technology
Physical Sciences
Instruments & Instrumentation
Nuclear Science & Technology
Physics, Atomic, Molecular & Chemical
Physics, Nuclear
Physics
GE SURFACE SEGREGATION
MOLECULAR-BEAM EPITAXY
REAL-TIME
RECOILING SPECTROMETRY
SPECTROSCOPY CAICISS
IN-SITU
GROWTH
OXIDATION
Language eng
DOI 10.1016/0168-583X(96)00260-1
Indigenous content off
Field of Research 0202 Atomic, Molecular, Nuclear, Particle and Plasma Physics
0402 Geochemistry
0915 Interdisciplinary Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142270

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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