Plasmon excitations and accumulation layers in heavily doped InAs(001)

Bell, GR, McConville, Christopher F and Jones, TS 1996, Plasmon excitations and accumulation layers in heavily doped InAs(001), Physical Review B - Condensed Matter and Materials Physics, vol. 54, no. 4, pp. 2654-2661, doi: 10.1103/PhysRevB.54.2654.

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Title Plasmon excitations and accumulation layers in heavily doped InAs(001)
Author(s) Bell, GR
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Jones, TS
Journal name Physical Review B - Condensed Matter and Materials Physics
Volume number 54
Issue number 4
Start page 2654
End page 2661
Total pages 8
Publisher AMERICAN PHYSICAL SOC
Place of publication United States
Publication date 1996-01-01
ISSN 1098-0121
1550-235X
Keyword(s) Science & Technology
Technology
Physical Sciences
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
Materials Science
Physics
ENERGY-LOSS SPECTROSCOPY
MOLECULAR-BEAM EPITAXY
GROWN GAAS(100)
COUPLED PLASMON
SURFACE
INAS
GAAS
INSB(100)
DISPERSION
DEPLETION
Language eng
DOI 10.1103/PhysRevB.54.2654
Indigenous content off
Field of Research 02 Physical Sciences
03 Chemical Sciences
09 Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142272

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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