Surface alloying at InAs-GaAs interfaces grown on (001) surfaces by molecular beam epitaxy

Belk, J. G., McConville, C. F., Sudijono, J. L., Jones, T. S. and Joyce, B. A. 1997, Surface alloying at InAs-GaAs interfaces grown on (001) surfaces by molecular beam epitaxy, Surface Science, vol. 387, no. 1-3, pp. 213-226, doi: 10.1016/S0039-6028(97)00355-5.

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Title Surface alloying at InAs-GaAs interfaces grown on (001) surfaces by molecular beam epitaxy
Author(s) Belk, J. G.
McConville, C. F.ORCID iD for McConville, C. F. orcid.org/0000-0003-1040-2794
Sudijono, J. L.
Jones, T. S.
Joyce, B. A.
Journal name Surface Science
Volume number 387
Issue number 1-3
Start page 213
End page 226
Total pages 14
Publisher Elsevier BV * North-Holland
Place of publication Amsterdam, The Netherlands
Publication date 1997-10-08
ISSN 0039-6028
1879-2758
Keyword(s) Science & Technology
Physical Sciences
Chemistry, Physical
Physics, Condensed Matter
Chemistry
Physics
gallium arsenide
indium arsenide
molecular beam epitaxy
reflection high energy electron diffraction
semiconductor films
surface segregation
surface structure, morphology, roughness, and topography
SCANNING-TUNNELING-MICROSCOPY
INITIAL-STAGES
INDIUM SEGREGATION
QUANTUM-WELLS
GAAS(001)
HETEROSTRUCTURES
RECONSTRUCTIONS
ANISOTROPY
GAAS(100)
INAS(001)
Language eng
DOI 10.1016/S0039-6028(97)00355-5
Indigenous content off
Field of Research 0204 Condensed Matter Physics
0206 Quantum Physics
0306 Physical Chemistry (incl. Structural)
HERDC Research category C1 Refereed article in a scholarly journal
Copyright notice ©1997, Elsevier Science
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142273

Document type: Journal Article
Collection: Deputy Vice-Chancellor Research Group
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