Limitations of step profile models in describing the space-charge distribution near semiconductor surfaces

Bell, G. R., McConville, C. F., Mulcahy, C. P. A. and Jones, T. S. 1997, Limitations of step profile models in describing the space-charge distribution near semiconductor surfaces, Journal of Physics Condensed Matter, vol. 9, no. 14, pp. 2903-2914, doi: 10.1088/0953-8984/9/14/006.

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Title Limitations of step profile models in describing the space-charge distribution near semiconductor surfaces
Author(s) Bell, G. R.
McConville, C. F.ORCID iD for McConville, C. F. orcid.org/0000-0003-1040-2794
Mulcahy, C. P. A.
Jones, T. S.
Journal name Journal of Physics Condensed Matter
Volume number 9
Issue number 14
Start page 2903
End page 2914
Total pages 13
Publisher Institute of Physics Publishing (IOP)
Place of publication Bristol, England
Publication date 1997-04-07
ISSN 0953-8984
1361-648X
Keyword(s) Science & Technology
Physical Sciences
Physics, Condensed Matter
Physics
ELECTRON-ENERGY-LOSS
ACCUMULATION-LAYER
LOSS SPECTROSCOPY
GROWN GAAS(100)
COUPLED PLASMON
EXCITATIONS
INSB(100)
INAS(110)
PHONON
DAMAGE
Language eng
DOI 10.1088/0953-8984/9/14/006
Indigenous content off
Field of Research 0204 Condensed Matter Physics
0912 Materials Engineering
1007 Nanotechnology
HERDC Research category C1 Refereed article in a scholarly journal
Copyright notice ©1997, IOP Publishing
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142276

Document type: Journal Article
Collection: Deputy Vice-Chancellor Research Group
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