Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A

Belk, J. G., Sudijono, J. L., Yamaguchi, H., Zhang, X. M., Pashley, D. W., McConville, C. F., Jones, T. S. and Joyce, B. A. 1997, Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A, Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films, vol. 15, no. 3, pp. 915-918, doi: 10.1116/1.580732.


Title Scanning tunneling microscopy studies of strain relaxation and misfit dislocations in InAs layers grown on GaAs(110) and GaAs(111)A
Author(s) Belk, J. G.
Sudijono, J. L.
Yamaguchi, H.
Zhang, X. M.
Pashley, D. W.
McConville, C. F.ORCID iD for McConville, C. F. orcid.org/0000-0003-1040-2794
Jones, T. S.
Joyce, B. A.
Journal name Journal of Vacuum Science and Technology Part A: International Journal Devoted to Vacuum, Surfaces, and Films
Volume number 15
Issue number 3
Start page 915
End page 918
Total pages 4
Publisher AIP Publishing
Place of publication Melville, N.Y.
Publication date 1997-01-01
ISSN 0734-2101
1520-8559
Keyword(s) Science & Technology
Technology
Physical Sciences
Materials Science, Coatings & Films
Physics, Applied
Materials Science
Physics
RELIEF
Language eng
DOI 10.1116/1.580732
Indigenous content off
Field of Research 02 Physical Sciences
09 Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142277

Document type: Journal Article
Collection: Deputy Vice-Chancellor Research Group
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