Surface atomic configurations due to dislocation activity in InAs/GaAs(110) heteroepitaxy

Belk, J. G., Pashley, D. W., McConville, C. F., Sudijono, J. L., Joyce, B. A. and Jones, T. S. 1997, Surface atomic configurations due to dislocation activity in InAs/GaAs(110) heteroepitaxy, Physical Review B - Condensed Matter and Materials Physics, vol. 56, no. 16, pp. 10289-10296, doi: 10.1103/PhysRevB.56.10289.

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Title Surface atomic configurations due to dislocation activity in InAs/GaAs(110) heteroepitaxy
Author(s) Belk, J. G.
Pashley, D. W.
McConville, C. F.ORCID iD for McConville, C. F. orcid.org/0000-0003-1040-2794
Sudijono, J. L.
Joyce, B. A.
Jones, T. S.
Journal name Physical Review B - Condensed Matter and Materials Physics
Volume number 56
Issue number 16
Start page 10289
End page 10296
Total pages 8
Publisher American Physical Society
Place of publication College Park, Md.
Publication date 1997-10-15
ISSN 1098-0121
1550-235X
Keyword(s) Science & Technology
Technology
Physical Sciences
Materials Science, Multidisciplinary
Physics, Applied
Physics, Condensed Matter
Materials Science
Physics
PSEUDOMORPHIC STRAIN
MISFIT DISLOCATIONS
GAAS(110)
RELIEF
SEMICONDUCTORS
MORPHOLOGY
EPILAYERS
GROWTH
FILMS
STEPS
Language eng
DOI 10.1103/PhysRevB.56.10289
Indigenous content off
Field of Research 02 Physical Sciences
03 Chemical Sciences
09 Engineering
HERDC Research category C1 Refereed article in a scholarly journal
Copyright notice ©1997, American Physical Society
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142281

Document type: Journal Article
Collection: Deputy Vice-Chancellor Research Group
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