Ab initio calculation of geometry and bonding for overlaid and inlaid models of Si(001)/Sb(0.25 ML)-c(4 × 4)

Jenkins, S. J., Srivastava, G. P., Dixon, R. J. and McConville, C. F. 1998, Ab initio calculation of geometry and bonding for overlaid and inlaid models of Si(001)/Sb(0.25 ML)-c(4 × 4), Surface Science, vol. 402-404, no. 1-3, pp. 645-648, doi: 10.1016/S0039-6028(97)00925-4.

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Title Ab initio calculation of geometry and bonding for overlaid and inlaid models of Si(001)/Sb(0.25 ML)-c(4 × 4)
Author(s) Jenkins, S. J.
Srivastava, G. P.
Dixon, R. J.
McConville, C. F.ORCID iD for McConville, C. F. orcid.org/0000-0003-1040-2794
Journal name Surface Science
Volume number 402-404
Issue number 1-3
Start page 645
End page 648
Total pages 4
Publisher Elsevier BV * North-Holland
Place of publication Amsterdam, The Netherlands
Publication date 1998-05-15
ISSN 0039-6028
Keyword(s) Science & Technology
Physical Sciences
Chemistry, Physical
Physics, Condensed Matter
Chemistry
Physics
antimony
density functional calculations
low index single crystal surfaces
semiconducting surfaces
silicon
surface electronic phenomena
surface relaxation and reconstruction
SURFACE
Language eng
DOI 10.1016/S0039-6028(97)00925-4
Indigenous content off
Field of Research 0204 Condensed Matter Physics
0206 Quantum Physics
0306 Physical Chemistry (incl. Structural)
HERDC Research category C1 Refereed article in a scholarly journal
Copyright notice ©1998, Elsevier Science
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142283

Document type: Journal Article
Collection: Deputy Vice-Chancellor Research Group
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