Surface morphology during strain relaxation in the growth of InAs on GaAs(110)

Belk, JG, Pashley, DW, McConville, Christopher F, Joyce, BA and Jones, TS 1998, Surface morphology during strain relaxation in the growth of InAs on GaAs(110), Surface Science, vol. 410, no. 1, pp. 82-98, doi: 10.1016/S0039-6028(98)00300-8.

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Title Surface morphology during strain relaxation in the growth of InAs on GaAs(110)
Author(s) Belk, JG
Pashley, DW
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Joyce, BA
Jones, TS
Journal name Surface Science
Volume number 410
Issue number 1
Start page 82
End page 98
Total pages 17
Publisher ELSEVIER SCIENCE BV
Publication date 1998-07-20
ISSN 0039-6028
Keyword(s) Science & Technology
Physical Sciences
Chemistry, Physical
Physics, Condensed Matter
Chemistry
Physics
diffusion and migration
epitaxy
gallium arsenide
indium arsenide
low index single crystal surfaces
molecular beam epitaxy (MBE)
nucleation
reflection high-energy electron diffraction (RHEED)
scanning tunneling microscopy
semiconductor-semiconductor heterostructures
single crystal epitaxy
surface structure, morphology, roughness, and topography
MOLECULAR-BEAM EPITAXY
SCANNING-TUNNELING-MICROSCOPY
MISFIT DISLOCATIONS
GAAS(001)-C(4X4)
RELIEF
FILMS
Language eng
DOI 10.1016/S0039-6028(98)00300-8
Indigenous content off
Field of Research 0204 Condensed Matter Physics
0206 Quantum Physics
0306 Physical Chemistry (incl. Structural)
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142287

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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