Depth profile and lattice location analysis of Sb atoms in Si/Sb(δ-doped)/ Si(001) structures using medium-energy ion scattering spectroscopy
Kobayashi, T, McConville, Christopher F, Dorenbos, G, Iwaki, M and Aono, M 1999, Depth profile and lattice location analysis of Sb atoms in Si/Sb(δ-doped)/ Si(001) structures using medium-energy ion scattering spectroscopy, Applied Physics Letters, vol. 74, no. 5, pp. 673-675, doi: 10.1063/1.122983.
Title
Depth profile and lattice location analysis of Sb atoms in Si/Sb(δ-doped)/ Si(001) structures using medium-energy ion scattering spectroscopy
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