Depth profile and lattice location analysis of Sb atoms in Si/Sb(δ-doped)/ Si(001) structures using medium-energy ion scattering spectroscopy Kobayashi, T, McConville, Christopher F, Dorenbos, G, Iwaki, M and Aono, M 1999, Depth profile and lattice location analysis of Sb atoms in Si/Sb(δ-doped)/ Si(001) structures using medium-energy ion scattering spectroscopy, Applied Physics Letters, vol. 74, no. 5, pp. 673-675, doi: 10.1063/1.122983. Title Depth profile and lattice location analysis of Sb atoms in Si/Sb(δ-doped)/ Si(001) structures using medium-energy ion scattering spectroscopy Author(s) Kobayashi, T McConville, Christopher F orcid.org/0000-0003-1040-2794 Dorenbos, G Iwaki, M Aono, M Journal name Applied Physics Letters Volume number 74 Issue number 5 Start page 673 End page 675 Total pages 3 Publisher AMER INST PHYSICS Publication date 1999-02-01 ISSN 0003-6951 1077-3118 Keyword(s) Science & Technology Physical Sciences Physics, Applied Physics Language eng DOI 10.1063/1.122983 Indigenous content off Field of Research 02 Physical Sciences 09 Engineering 10 Technology HERDC Research category C1 Refereed article in a scholarly journal Persistent URL http://hdl.handle.net/10536/DRO/DU:30142295 Document type: Journal Article Collection: Office of the Deputy Vice-Chancellor (Research) Related Links Link Description   Unless expressly stated otherwise, the copyright for items in DRO is owned by the author, with all rights reserved. Versions Version Filter Type Fri, 18 Sep 2020, 13:52:56 EST Sat, 19 Sep 2020, 05:01:04 EST Sat, 19 Sep 2020, 06:04:19 EST Wed, 28 Oct 2020, 13:29:53 EST Wed, 28 Oct 2020, 13:30:42 EST Tue, 03 Nov 2020, 09:01:59 EST Filtered Full Citation counts:   Cited 5 times in TR Web of Science Cited 6 times in Scopus Search Google Scholar Access Statistics: 14 Abstract Views  -  Detailed Statistics Created: Fri, 18 Sep 2020, 13:52:56 EST

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