Sulphur-induced electron accumulation on InAs: A comparison of the (0 0 1) and (1 1 1)B surfaces

Lowe, MJ, Veal, TD, Mowbray, AP and McConville, Christopher F 2003, Sulphur-induced electron accumulation on InAs: A comparison of the (0 0 1) and (1 1 1)B surfaces, Surface Science, vol. 544, no. 2-3, pp. 320-328, doi: 10.1016/j.susc.2003.08.047.

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Title Sulphur-induced electron accumulation on InAs: A comparison of the (0 0 1) and (1 1 1)B surfaces
Author(s) Lowe, MJ
Veal, TD
Mowbray, AP
McConville, Christopher FORCID iD for McConville, Christopher F orcid.org/0000-0003-1040-2794
Journal name Surface Science
Volume number 544
Issue number 2-3
Start page 320
End page 328
Total pages 9
Publisher ELSEVIER SCIENCE BV
Publication date 2003-10-20
ISSN 0039-6028
Keyword(s) Science & Technology
Physical Sciences
Chemistry, Physical
Physics, Condensed Matter
Chemistry
Physics
electron density, excitation spectra calculations
electron energy loss spectroscopy (EELS)
surface electronic phenomena (work function
surface potential, surface states, etc.)
plasmons
chalcogens
indium arsenide
semiconducting surfaces
X-ray photoelectron spectroscopy
V SEMICONDUCTOR SURFACES
INAS(001) SURFACES
PASSIVATION
INAS(100)
PLASMON
LAYERS
SPECTROSCOPY
STATES
LEED
AES
Language eng
DOI 10.1016/j.susc.2003.08.047
Indigenous content off
Field of Research 0204 Condensed Matter Physics
0206 Quantum Physics
0306 Physical Chemistry (incl. Structural)
HERDC Research category C1 Refereed article in a scholarly journal
Persistent URL http://hdl.handle.net/10536/DRO/DU:30142326

Document type: Journal Article
Collection: Office of the Deputy Vice-Chancellor (Research)
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